20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 IRFP440 power mosfet dynamic dv/dt rating repetitive avalanche rated isolated central mounting hole fast switching ease of paralleling simple drive requirements vdss=500v rds(on) = 0-85q id = 8.8a the to-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of to-220 devices. the to-247 is similar but superior to the earlier to-218 package because of its isolated mounting hole. it also provides greater creepage oisiance between pins tc meet the requirements of most safety specifications. absolute maximum ratings to-247ac id 0 tc = 25c id? tc=100c i dm pd @ tc = 25c vgs eas jar ear dv/dt tj tstg parameter continuous drain current, vgs @ 10 v continuous drain current, vgs @ 10 v pulsed drain current '& power dissipation linear derating factor gate-to-source voltage single pulse avalanche energy 3> avalanche current ? repetitive avalanche energy co peak diode recovery dv/dt operating junction and storage temperature range soldering temperature, for 10 seconds mounting torque, 6-32 or m3 screw max 8.8 5.6 35 150 1.2 20 480 8.8 15 3.5 -5510+150 300 (1.6mm from case) 10lbf.in (1.1 n.m) units a w w/-c v mj a mj v/ns c thermal resistance i parameter min. rojc rocs roja typ. ; junction-to-case ? ? case-to-sink, flat, greased surface ? ' 0.24 junction-to-ambient ? ? max. 0.83 40 units c/w nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
IRFP440 electrical characteristics @ tj = 25c (unless otherwise specified) v(bh)dss av(bh)dss/atj rnsfonl vosah; gis qg qgs qga td(on) tr td(oll) ti ld ls ciss cqss c,ss parameter drain-to-source breakdown voltage breakdown voltage temp. coefficient static drain-to-source on-resistance gate threshold voltage forward transconductance . gate-to-source forward leakage gate-to-source reverse leakage total gate charge gate-to-source charge gate-to-drain ("miller") charge turn-on delay time rise time turn-off delay time fall time internal drain inductance internal source inductance input capacitance output capacitance reverse transfer capacitance min. 500 2.0 5.3 ? ? ? ? ? ? ? ? typ. 0.78 ? ? ? 14 23 49 20 5.0 13 1300 31c 120 max. 0.85 4.0 ? 25 250 100 -100 63 11 30 ? - ? ? units v v/c q v s fla nc nh pf test conditions vgs=ov, id= 250ua reference to 25"c, b= 1 ma vcs=10v, id=5.3a -' vds=vgs. b= 250jia vds=50v, lo=5.3a |
